Abstract
Highly Be-modulation-doped ( p=2×10 19 cm -3) AlGaAs/ GaAs MQWs without interface disorder for ultra-high-speed laser diodes have been grown by molecular beam epitaxy (MBE). The MQWs were grown at low substrate temperatures below 600°C to avoid diffusion of highly doped Be during growth. Structures of the modulation doped MQW were analyzed by high resolution SIMS and TEM analysis, which showed that no disordering took place at the MQW region. Photoluminescent peak wavelength of the modulation doped MQW was shifted to 13 meV lower energy side from that of an undoped MQW at 77 K as a result of energy band bending. The modulation doped MQW laser, though grown at such low growth temperatures, showed stable room temperature operation with extremely high relaxation oscillation frequency up to 30 GHz, which is about twice as high as previous top data.
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