Abstract
ZnMoO4 single crystals of high optical quality were grown using low temperature gradient Czochralski technique and their luminescence properties were studied. At low temperatures two overlapping luminescence bands with the maxima 1.93eV and 2.45eV were detected at Eex>3.9eV. The bands are attributed to the radiative recombination of self-trapped excitons of MoO42- parentage. High-intensity non-elementary peak of thermostimulated luminescence (TSL) observed at 65K is due to the thermal release of self-trapped holes. The threshold of TSL excitation spectrum at 6.2eV exceeds the bandgap value by 1.9eV and corresponds to electronic transitions from the valence band to the upper subband of the conduction band.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
