Abstract
InGaAsP epilayers were successively grown on a GaAS 0.61P 0.39 substrate at a low growth temperature of 689°C. The characteristic convex relation between X ℓ Ga and X ℓ As was observed. Although the epilayer surfaces were almost mirror-like, somewhat rough surfaces were observed in the epilayers with medium band gaps. The samples with rough surfaces also had wider FWHM's in the photoluminescence spectra. A carrier concentration spike at the substrate-epilayer interface disappeared by lowering the growth temperature from 789 to 689°C. Compositional variation was observed in the epilayers having higher As content, which was due to P atom depletion from the melt.
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