Abstract
Abstract Cleaved Si(111) surfaces have been simultaneously investigated by LEED and DC conductance measurements in ultrahigh vacuum ( ~ 10 −10 Torr) for different cleavage temperatures, T c . It was found that for any T c in the whole investigated range of 9–300 K the Si(111) surfaces show 2 × 1 LEED patterns at any crystal temperature (after the cleavage) in the range 9–300 K, in contrast to Ge(111) cleaved surfaces which show a 1 × 1 LEED structure if T c ≲ 40 K. Direct observation of the DC conductance along the surface states on Si(111) cleaved surfaces was found to be possible: the Si crystals containing 10 12 –10 14 cm −3 shallow donors or acceptors were found to possess surface state conductivity in the range of 10 −8 −10 −7 Ω −1 /□ at T = 19 K.
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