Low-temperature layer transfer of midair cavity silicon films to a poly(ethylene terephthalate) substrate by meniscus force

Abstract

A single-crystalline-silicon (c-Si) layer (supported by columns on a starting Si-on-insulator wafer) and a counter-poly(ethylene terephthalate) (PET) substrate were placed in close face-to-face contact, and pure water was sandwiched in between the c-Si layer and the PET substrate. The samples formed in this manner were heated on a hot plate at 80 °C. By the meniscus force generated during the evaporation of the sandwiched water from the samples, the c-Si films were completely transferred to the PET substrate. A (100)-oriented c-Si thin film that shows good adhesion was successfully formed on PET substrates at low process temperatures.