Low-temperature laser-CVD thin film growth of SiC from Si 2H 6 and C 2H 2

Abstract

SiC thin films have been synthesised by combining low pressure chemical vapour deposition from Si 2H 6 and C 2H 2 at 520°C and in situ KrF-excimer laser annealing. Glancing incidence X-ray analysis showed the quantity of polycrystalline SiC in the laser-irradiated area depends on the mass-flow ratio of the precursor gases. In the region outside the laser spot where the films are amorphous, X-ray photoelectron spectroscopy measurements showed an increased SiC character for low disilane:acetylene mass-flow ratios.