Abstract
The electrical properties in the temperature range 295–430 K and low-temperature (4.2 K) photoluminescence of Cd1−xZnxTe:Cl semi-insulating crystals grown from melts with a variable impurity content (CCl0 = 5 × 1017–1 × 1019 cm−3) are investigated. Nonequilibrium processes leading to a decrease in carrier concentration are observed in all the samples at low temperatures (T = 330–385 K). These changes are reversible. The activation energy of these processes Ea is found to be 0.88 eV. As with semi-insulating CdTe:Cl, the observed phenomena can be explained by a change in the charge state of background copper atoms: CuCd ↔ Cui. The introduction of Zn changes the ratio of the concentrations of shallow-level donors Cui and ClTe from their levels in the initial material.
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