Abstract
Superconducting YBCO thin films with a zero resistance temperature of around 80 K and very sharp transitions were obtained on Si substrates by RF magnetron sputtering from a stoichiometric oxide target. Metallic ruthenium oxide was used as a buffer layer to reduce the interdiffusion between YBCO and Si and to nucleate YBCO. The stoichiometry of the YBCO films was well controlled by arranging the substrates perpendicular with respect to the target. The introduction of oxygen into the sputtering chamber immediately after YBCO film deposition was very important to obtain such superconducting films as indicated by the in situ film resistance measurement.
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