Abstract
Low temperature diffusion of boron and phosphorus has been realized for the first time in monocrystalline SiC through controlled surface injection of silicon vacancies. By varying the parameters of the surface oxide overlayer during the boron/phosphorus diffusion process, it was possible to obtain the SiC planar quantum-size p- n junctions and transistor structures featuring low values for dark leakage currents. Use of the SiC quantum-size transistor structures in both bipolar and FET variations has been found to result in the generation of the negative resistance due to avalanche current processes.
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