Abstract
High strength bonds can be formed between portions of silicon wafer coated with reflowed BPSG at temperatures as low as 160°C. Both a novel modified cantilever beam analysis, and crude physical methods attest to the strength of the bonds formed. Strong bonds between thermal oxides also have been observed, indicating that neither boron nor phosphorous are essential to the process. Preparation cleanliness may be the key to low temperature, high strength bonding. Recent work in the glass sol‐gel area supports the hypothesis that this process is the result of a low temperature condensation reaction.
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