Abstract
We report on the growth of thermal quality SiO 2 thin films by a high-density plasma process employing an inductively coupled plasma (ICP) source driven by radio-frequency (rf) power. A high SiO 2 growth rate, with a thickness of 100 A after 10 min, was obtained at a substrate temperature of 360°C in a He/O 2 (3%) plasma. The observed low-temperature growth and electrical properties of the metal-oxide-semiconductor capacitors suggest that the high plasma density and energy and low plasma potential are effective in providing a dense microstructure with low defect concentration and good Si/SiO 2 interfacial characteristics.
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