Abstract
Thin films of SiO 2 on Si(100) at 300 < T < 700 K were grown by the decomposition of tetraethoxysilane (TEOS) under ultra-high vacuum conditions. Gaseous TEOS was admitted to the Si(100) crystal via a dosing tube heated at 870–1070 K allowing TEOS to decompose at the Si surface and the pressure in the system to stay below 5 × 10 −7 mbar. The growth of SiO 2 was monitored by photoelectron spectroscopy of Si 2p, O 1s and C 1s core level peaks for a number of different conditions. The present demonstration of low temperature chemical vapor deposition of SiO 2 may be useful for preparing dielectric films on highly integrated device structures without degrading structural aspect ratios.
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