Abstract
AbstractComparatively low temperature growth of Pb(Zr0.52Ti0.48)O3 thin films was accomplished by using rf magnetron sputtering process. Well crystallized PZT thin films (4000Å thickness) were synthesized on Pt/Ti/SiO2/Si(100) substrate at the temperature as low as 5200°C. The polycrystalline PZT perovskite phase formation was confirmed with XRD analysis. Remanent polarization(Pr) and coercive field(Ec) of as-grown film (4000Å) were 8–30 μC/cm2 and 24–64 kV/cm with the applied voltage variation(5–17 V). The post annealing enhances the electrical properties even at 500°C, which is below the as-grown temperature(520°C). The increase of annealing temperature resulted in the consequent increase of remanent polarization and the decrease of coercive field. The values of dielectric constant(ε′ ) and tan δ measured with small signal sign wave(1V, 10kHz) were 1207 and 0.066 in case of as-grown film (4000Å).
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