Abstract
Absract Low-temperature growth of InSb films on Si(1 1 1) substrate was performed in an ultra-high vacuum chamber by coevaporation of elemental Indium and Antimony. The grown InSb films were characterized by using X-ray diffraction (XRD) and atomic force microscopy (AFM). Despite large lattice mismatch of about 19.3% between them (1 1 1) preferentially oriented InSb films were obtained on Si(1 1 1) at the low growth temperature range of 200–300 °C. It is found that the high-quality InSb films with smooth surface and two kinds of domains grow on Si(1 1 1) substrate at the temperature rang of 220–240 °C.
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