Abstract
High-quality body-centered cubic In2O3 films were grown on a-plane sapphire substrates at a temperature range of 100–600 °C by pulsed laser deposition. The structure, optical, and electrical properties were studied by X-ray diffraction, Raman spectroscopy, spectrophotometer, and Hall effect. The obtained In2O3 films have a bcc structure, a high carrier concentration range of 1 × 1019–9 × 1020 cm−3, a mobility range of 8 to 30 cm2V−1s−1, and a wide bandgap of 3.7–3.9 eV. The change of substrate temperature affects the crystalline quality, transmittance, carrier concentration, mobility, and bandgap value of In2O3 films. We believe that the low-temperature growth of high-quality In2O3 films can make In2O3 more widely used in various semiconductors devices.
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