Abstract
A variety of diamond films were synthesized in a microwave plasma of a CO- O 2- H 2 system by varying the O 2 mole fraction. Then their properties were analysed by Raman spectroscopy and correlated with atomic hydrogen concentration in the plasma. The O 2 additions were found to be effective for low temperature growth of high quality films as they ensured (1) a high concentration of atomic hydrogen in the gas phase, (2) a low concentration of acetylene in the gas phase and (3) efficient etching of amorphous hydrogenated carbon. It was confirmed that highly purified diamond films could be deposited even at 411 °C in a 2.2% O 2 system at a growth rate of 0.035 μm h -1. The full width at half-maximum of the diamond peak at 1333 cm -1 was 4.0 cm -1, which was extremely close to that of natural diamond.
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