Abstract
High-quality Ge1−xSnx thin films on InGaAs buffer layers have been demonstrated using low-temperature growth by molecular beam epitaxy. X-ray diffraction and secondary ion mass spectrometry are used to determine the strain and Sn concentration. Up to 10.5% Sn has been incorporated into the Ge1−xSnx thin film without Sn precipitation, as verified by transmission electron microscopy. Roughened surfaces are found for tensile strained Ge1−xSnx layers.
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