Low temperature growth of GaP LPE layers from indium solvent

Abstract

GaP LPE layers were successfully grown from indium solvent. The lowest temperature at which a smooth layer was obtained was 580° C. The background carrier concentrations of the undoped layers grown at temperatures below 670° C were 1−6 × 10 15 cm -3. It was found that this low background value was not due to the high level compensation. Low temperature growth is found to be effective to obtain high purity GaP crystals.