Abstract
Diamond-like films with electrical resistivity exceeding 10 8 Ω·cm are grown successfully on silicon substrates at 40°C in a cathodic arc plasma deposition system with a steered-arc source. The substrate is placed in an atmosphere of argon/oxygen mixture and RF-bias is applied. Low density graphite serves as a cathode target and a carbon source. The magnetic field due to magnets behind the graphite target makes the arc spot move. The observed speed of the steered-arc spot is strongly dependent on the magnitude of the applied arc current and the intensity of the radial magnetic field at the surface of the target. Addition of O 2 to the system tends to improve the quality of the diamond-like films by increasing the sp 3-C sp 2-C ratio and reducing the number and size of graphite microparticles with decreased deposition rate of the films. The application of RF-bias also appears to have a similar beneficial effect on the quality of the films.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
