Abstract
High quality Schottky junctions using Co2MnSi/diamond heterostructures were fabricated. Low temperature growth at ∼300–400 °C by using ion-beam assisted sputtering (IBAS) was necessary to obtain abrupt Co2MnSi/diamond interfaces. Only the Co2MnSi films formed at ∼300–400 °C showed both saturation magnetization comparable to the bulk values and large negative anisotropic magnetoresistance, which suggests half-metallic nature of the Co2MnSi films, of ∼0.3% at 10 K. Schottky junctions formed using the Co2MnSi films showed clear rectification properties with rectification ratio of more than 107 with Schottky barrier heights of ∼0.8 eV and ideality factors (n) of ∼1.2. These results indicate that Co2MnSi films formed at ∼300–400 °C by IBAS are a promising spin source for spin injection into diamond semiconductors.
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