Abstract
Aluminium nitride (AlN) thin films have been grown on a variety of substrates using low-temperature radio frequency reactive sputtering of aluminium in pure nitrogen plasma. Quantitative analyses of the film composition, carried out using X-ray photoelectron spectroscopy (XPS) and Rutherford backscattering spectrometry (RBS), suggest the resulting films to be near stoichiometric with high amounts of oxygen present in them. The high concentration of oxygen in our films is attributed to the voided microstructure as revealed by cross-sectional scanning electron microscopy.
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