Abstract
We report on the low-temperature growth and characterization ofepitaxial all-oxide ferroelectric thin film capacitors,La0.5Sr0.5CoO3/Pb(Zr0.52Ti0.48)O3/La0.5Sr0.5CoO3,on Si(001) substrates by use of SrTiO3/TiN as buffer layers. The capacitorand the buffer layer stack were grown sequentially at 540 °C by in situ pulsed laser deposition. Structural characterization usingthree-axis x-ray diffraction (specular and off-specular θ-2θscan, ω-scan rocking curve, and ϕ scan) reveals a parallel growthfor all layers. Scanning electron micrographs show that the epitaxialheterostructures have a smooth and crack-free surface. The sharpcharacteristic optical absorption bands of the SrTiO3 andPb(Zr0.52Ti0.48)O3 layers also imply good crystallinity in theas-grown films. Resistivity versus temperature measurements show that both thebottom and top oxide electrodes are highly conductive with resistivity at300 K of 170 and 140 µΩ cm, respectively. Remanent polarization of19 µC cm-2, coercive field of 45 kV cm-1 and negligible fatigueafter 109 cycles at 8 V indicate good electric performance of theintegrated capacitor structure.
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