Abstract
Ga2O3 is a promising gas-sensing material that can operate over a wide temperature range. However, despite its relevance for practical applications, there is a lack of understanding regarding its sensing mechanism at temperatures below 800 °C. To reveal the sensing mechanism, GaOOH nanorods were grown on β-Ga2O3 seed layers by chemical bath deposition, then converted to β-Ga2O3 by annealing in the air at 500 °C, and the surface properties were investigated by near-ambient pressure X-ray photoelectron spectroscopy (NAP-XPS) in the presence of oxidizing/reducing gases. Time-stable shifts in the XPS spectra were used to estimate the relative changes in conductivity in compliance with the ionosorption model. Our results indicate that the sensing mechanism at lower temperatures is governed by redox reactions, leading to an increase/decrease in the conductivity for reducing/oxidizing gases. Furthermore, we provide a detailed description of the ethanol-sensing mechanism at different temperatures.
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