Abstract
Ga diffusion from focused ion beam (FIB) milled grooves has been studied using x-rayphotoemission electron microscopy (XPEEM) and mirror electron microscopy (MEM). Weanalyze the surface chemistry of the FIB structures measuring the Ga presence in the toplayers of the milled grooves and morphological defects inside the grooves. The Ga isinitially strictly confined to the grooves. However, annealing at temperatures as low as150 °C leads to rapid and significant Ga surface diffusion from the FIB structures. Theout-diffused Ga forms a thin layer extending up to several microns laterally in anon-regular pattern. The diffusion is significantly enhanced at small crystallites at theedges of the grooves. We explain the general behavior with an atomic scale model in whichinterstitial Ga in the milled areas diffuses out and substitutes silanol groups on the surface.
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