Abstract
Abstract New formation technique of high quality Si/CoSi 2 /Si double heterostructures and fine patterning of CoSi 2 electrodes were developed using self-aligned and two-step molecular beam epitaxy (MBE). In addition, a permeable base transistor (PBT) was successfully fabricated, which showed a high mutual conductance ( g m ) of 42 mS mm −1 .
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