Abstract
The precursor for the W CVD on GaAs used is W(CO)/sub 6/. The contact resistance in W/GaAs is obtained by the transmission line measurements of patterned W on heavily doped GaAs grown by MLE. The dependence of the contact resistance on the surface treatment prior to the W CVD is also studied. Barrier height of W/GaAs structure is measured by the temperature dependence of I-V characteristics in reference to the contact resistance. The W/GaAs interface is analyzed using SIMS and RBS. Contact resistance of non-alloyed structure achieved are 3/spl times/10/sup -2/ /spl Omega/ cm/sup 2/ for n-type GaAs and below 5/spl times/10/sup -8/ /spl Omega/ cm/sup 2/ for p-type respectively. From the physical analysis, the mixed layer in W/GaAs interface is estimated less than 20 /spl Aring/.
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