Abstract
A plasma-enhanced sputter deposition system has been developed via enhancement of target sputter discharge with inductively coupled RF plasma (ICP) driven by multiple inner-type low-inductance antennas (LIAs). The advantage of fine control of reactivity during the deposition is of great significance for the deposition of a transparent amorphous oxide semiconductor films, amorphous InGaZnOx (a-IGZO), whose electrical properties are significantly sensitive to the reactivity of the films with oxidation species during the film deposition. The characteristics of thin-film transistors (TFTs) fabricated with an a-IGZO film using the plasma-enhanced magnetron sputter deposition system have been investigated. The a-IGZO channel TFTs fabricated using the plasma-enhanced reactive sputtering system at a substrate temperature as low as or lower than 150 °C exhibited a good performance of μFE = 18.5 cm2 V−1 s−1.
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