Abstract
Polycrystalline Vanadium dioxide (VO2) thin film can be fabricated on glass substrates by high power impulse magnetron sputtering at a relative high temperature. In order to apply an effective bias voltage on substrate and control the energy of the ions impinged to the substrate, conductive indium-tin oxide (ITO) glass was used as the substrate. UV-visible-near IR transmittance spectra and X-ray diffraction (XRD) patterns of the as-deposited films exhibited that M-VO2 thin film with a metal–insulator transition temperature of 37[Formula: see text]C was fabricated successfully at 300[Formula: see text]C with a bias voltage of [Formula: see text]200[Formula: see text]V, and the calculated average crystalline size of this film was about 12[Formula: see text]nm. XRD patterns at varied temperatures showed that the structural change of MIT of the VO2 thin film was suppressed during the phase transition process, and a pure Mott transition was obtained.
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