Abstract
Assisted by UV/O3 annealing, InZnO thin-film transistors (TFTs) fabricated at a low temperature of 290°C showed a high field-effect mobility of 2.19 cm2/(V·s). This value was almost the same as that of InZnO TFTs annealed at 700°C without UV/O3 assistance. Si ions in the substrate were induced by UV irradiation and diffused into the InZnO thin film. They entered Zn ions sites in the InZnO matrix, and more oxygen vacancies and freely moving electrons were subsequently generated. Thus, a high mobility was obtained although the annealing temperature was lower than the pyrolysis temperature of the InZnO precursor.
Highlights
zinc oxide (ZnO), and zinc tin oxide have attracted significant attention in the context of thin-film transistors (TFTs) because of their excellent optical and electrical properties.[1,2,3,4,5,6] Of these materials, indium ZnO (IZO) is preferable because it can be used both as a transparent electrode and as a semiconductor of TFTs.[7]
The solution-process deposition method, is likely to be used for the future mass production of thin-film oxides because of its low cost, simplicity, high throughput, and accurate control of the composition for multicomponent thin films.[2,3,4,5,6,7]
Solution-processed IZO thin films with a composition of about In:Zn = 4:1 were prepared for the fabrication of TFTs
Summary
ZnO, and zinc tin oxide have attracted significant attention in the context of thin-film transistors (TFTs) because of their excellent optical and electrical properties.[1,2,3,4,5,6] Of these materials, IZO is preferable because it can be used both as a transparent electrode and as a semiconductor of TFTs.[7]. Low-temperature fabrication of solution-processed InZnO thin-film transistors with Si impurities by UV/O3-assisted annealing
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