Abstract

Solution-processed thin film transistors (TFTs) used in flexible electronics require them to be fabricated under low temperature. Ultraviolet (UV) treatment is an effective method to transform the solution precursors into dense semiconductor films. In our work, high-quality indium zinc oxide (IZO) thin films were prepared from nitrate-based precursors after UV treatment at room temperature. After UV treatment, the structure of IZO thin films was gradually rearranged, resulting in good M–O–M network formation and bonds. TFTs using IZO as a channel layer were also fabricated on Si and Polyimide (PI) substrate. The field effect mobility, threshold voltage (Vth), and subthreshold swing (SS) for rigid and flexible IZO TFTs are 14.3 and 9.5 cm2/Vs, 1.1 and 1.7 V, and 0.13 and 0.15 V/dec., respectively. This low-temperature processed route will definitely contribute to flexible electronics fabrication.

Highlights

  • Metal oxide semiconductors used as channel layers in thin film transistors (TFTs) have been extensively investigated due to their good transparency and electronic conductivity [1,2,3]

  • We explored flexible thin film transistors using PI as a substrate and atomic layer deposition (ALD)-Al2 O3 as a buffer layer

  • After UV treatment, the IR spectra for indium zinc oxide (IZO) thin film was found to be similar with the Si substrate

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Summary

Introduction

Metal oxide semiconductors used as channel layers in thin film transistors (TFTs) have been extensively investigated due to their good transparency and electronic conductivity [1,2,3]. UV treatment induces the efficient densification of metal oxide thin films without additional high temperature processing. UV treatment is an effective way to fabricate metal oxide thin films at low temperature [12]. Solution-processed high-performance IZO thin film transistors were fabricated by UV treatment. The flexible IZO TFT showed good performance and repeatability, such as an on/off ratio of 107 , a mobility of 9.5 cm2 /Vs, and an SS of 0.15 V/dec. This new process of fabricating IZO TFTs at low temperature creates insight into the applications of flexible and transparent devices

Precursor Synthesis
Film Fabrication and Characterization
Characterizations
Results and Discussion
3.3.Results
The scanning area wasof5ofthin μm
Conclusions
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