Abstract
A novel method for fabrication of epitaxial YbBa 2Cu 3O 7 (Yb123) films at low temperatures by a coating-pyrolysis process is presented. This method comprises precisely controlled heat treatment of prefired films starting with a metal acetylacetonate-based solution according to the following schedule: (1) heated in O 2 atmosphere at 700–750 °C, (2) subsequently, in Ar–O 2 atmosphere with pO 2=10 −4 atm, and (3) postannealed at 300 °C in O 2 atmosphere. We have thus succeeded in preparing c-axis oriented epitaxial Yb123 films at temperatures lower than 750 °C. It was revealed that the initial heating in O 2 atmosphere was effective for lowering crystallization temperature. An epitaxial Yb123 film on 50-mm-diameter LaAlO 3 prepared at 720 °C showed J c∼3.5×10 5 A/cm 2 at 77 K and R s∼3.5 mΩ at 12 GHz and 70 K. While on CeO 2-buffered R-plane sapphire substrates, epitaxial films were fabricated at as low as 700 °C.
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