Low temperature fabrication of Al2O3 nanostrips and their enhanced dielectric property

Abstract

Under ambient conditions, Al2O3 nanostrips were obtained through economical and facile hydrothermal route followed by dehydration process. The average length and width of the rectangular nanostrips were found to be 74 nm and 36 nm, respectively. On account of the significance of hydrothermal preparation route Al2O3 nanostrips with a lower band gap of 4.19 eV were obtained in comparison to counter routes which result in the higher bandgap Al2O3 nanostructures. Owing to the low band gap, the resulting samples show enhanced dielectric constant and a decrease in dielectric loss as the frequency increases than the nanostructures obtained through other routes under such conditions. Furthermore using super-saturation ratio, the detailed fabrication mechanism of Al2O3 nanostrips throughout the hydrothermal process have been incorporated.