Abstract
ABSTRACTMercury cadmium telluride epitaxial layers have been grown using methylallyltelluride (MATe), dimethylcadmium (DMCd), and elemental Hg. Using these precursors high quality films have been achieved over the temperature range of 200-300°C. Comparisons are made between UV photon-assisted and thermally deposited films. Composition, growth rate, and electrical properties are compared for the two processes under various parameter conditions. Properties of films deposited on various substrates including CdTe, GaAs, and GaAs/Si are also described.
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