Abstract
AlGaN/GaN metal-insulator-semiconductor (MIS) diodes have been demonstrated using low temperature epitaxy (LTE) AlN grown at 200°C as a dielectric for the first time. The MIS-diodes exhibited 3 orders of magnitude lower gate leakage current compared to conventional Schottky diodes. The interface state density (D it ) was estimated using the conductance-frequency method (CF) at a minimum value of 2.6×1012 cm-2eV-1 at 0.24 eV below the conduction band. These D it values are comparable to those obtained from PEALD grown bi-layer Al 2 O 3 /AlN and LPCVD grown SiN on GaN MIS-diodes.
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