Low-temperature epitaxial technology for flexible optoelectronic devices

Abstract

Flexible optoelectronic devices need to make or loadphotoelectric conversion films on metal, glass, plastic and other flexiblenon-single crystal substrate. The existing methods for realizing flexibleoptoelectronic devices fall into two categories: deposition of organicoptoelectronic conversion films directly on non-single-crystal substrates ortransferring the epitaxial growth of the inorganic optoelectronic conversion filmfrom a single-crystal substrate to non-single-crystal substrate. The formercannot be used to produce inorganic optoelectronic devices on flexible non-single-crystalsubstrates, and the latter requires a difficult large-area transfer. If theinorganic optoelectronic devices can be extended directly on the flexiblenon-single-crystal substrate, a new technological and researchdirection will be developed for flexible inorganic optoelectronicdevices. Traditional epitaxial growth of inorganic optoelectronic devicesoften requires a high epitaxial growth temperature and a single-crystal substrate with a high softening temperature. The former dissolves thereactants and provides the atomic surface with migration capability, and thelatter provides the lattice arrangement of the inorganic optoelectronicconversion films. It is possible to directly grow the inorganicoptoelectronic thin film on the flexible non-single-crystal substratethrough the coupling of an electromagnetic field to reduce the temperaturerequired by the epitaxial growth. This paper analysis the research status oflow-temperature epitaxy technology, and emphatically introduces the low-temperature epitaxial method proposed by our research team-inductively coupledplasma metal-organic chemical vapor phase epitaxy (ICP-MOVPE)-including thedesign concept of ICP-MOVPE, the simulation of the plasma in the reactionchamber, and the preliminary results of this equipment for the epitaxialgrowth of III-nitride semiconductors.