Low-Temperature Epitaxial Si, SiGe, and SiC in a 300mm UHV/CVD Reactor

Abstract

Low-temperature epitaxial Si, SiGe, and SiC films were grown in a 300mm cold-wall UHV/CVD reactor on (100) silicon wafers (bulk and SOI) at temperatures ranging from 300 to 800 °C using disilane, germane and methylsilane. Four key advantages of UHV/CVD over RPCVD are demonstrated: (i) higher structural quality of epitaxial Si using disilane as a precursor, (ii) highly controlled growth of ultra-thin Si down to ~ 6 Aå, (iii) planar growth of SiGe at ultra low temperature (< 375 ºC), and (iv) planar growth of germanium at temperatures of less than 350 ºC.