Abstract
Glancing-angle Rutherford backscattering and channeling techniques have been used to investigate the regrowth of Ar+-ion-implanted amorphous layers on (100) GaAs. Under carefully controlled implant conditions, amorphous GaAs layers can be recrystallized epitaxially at temperatures below 250 °C. However, the regrowth process is complex, with the crystalline quality and regrowth rate most dependent on implant dose.
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