Abstract
Thin films of high dielectric constant rutile phase titanium dioxide were grown epitaxially on tin dioxide substrates, which are a low cost, more abundant alternative to ruthenium electrodes used previously. Atomic layer deposition at low temperature was used with titanium(IV) tetrakis(isopropoxide) and hydrogen peroxide as precursors. The rutile thin films have crystalline grains that match the structure and orientation of the grains in the polycrystalline rutile phase substrates. The epitaxial relations can be clearly identified from the continuous lattice fringes across the interfaces.
Highlights
Metal-insulator-metalMIMstructures with high capacitance density are increasingly needed for various applications in microelectronics,[1] capacitive energy storage,[2] and wireless communication with integrated radio-frequency circuits.[3]
Great effort has been put into developing high dielectric constant͒ materials as insulators, such as HfO2 ͑ ϳ 25͒, ZrO2 ͑ ϳ 25–30͒, Ta2O5 ͑ ϳ 26͒, and rare-earth oxides ϳ 20–30͒
TiO2 thin films grown by both physical vapor deposition and chemical vapor deposition usually have anatase or amorphous structures, which only have a moderately high dielectric constant ϳ 20–40͒
Summary
Metal-insulator-metalMIMstructures with high capacitance density are increasingly needed for various applications in microelectronics,[1] capacitive energy storage,[2] and wireless communication with integrated radio-frequency circuits.[3]. Low Temperature Epitaxial Growth of High Permittivity Rutile TiO2 on SnO2 We report, for the first time, ALD of rutile TiO2 epitaxially on conductive SnO2, which has potential application to high density capacitors.
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