Abstract
Our recent progresses in epitaxial growth of Fe3Si on Ge substrates are reviewed. Single crystalline Fe3Si layers with atomically flat interfaces were achieved on Ge(111) substrates by optimizing growth conditions at low temperatures (60-200oC). Thermal stability of it was guaranteed up to 400oC. In addition, epitaxial growth of mixed layers composed of Fe3Si, FeGe, and FeSi on Ge substrates at 400oC is reported. Finally, epitaxial growth of Fe3Si/Ge/Fe3Si/Ge structures is discussed. These results will be a powerful tool to open up SiGe related spintronics.
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