Abstract
The temperature alteration of the kinetic electron characteristics (conductivity, Hall coefficient, magnetic field dependences of resistivity) ofSi crystals containing δ -layers with variousSb atom concentrationsNSb has been studied in the range 1.6–300 K. It was revealed that at low temperatures the properties of such a system are specified by the δ-layer itself. The temperature dependence of the electronic characteristics of low resistance samples (NSb=(1÷3)·1014cm−2) is due to quantum interference effects (effects of electron weak localization (WL) and electron-electron interaction (EEI)) in the two-dimensional system, and those of high resistance (NSb=(5÷10)·1012cm−2) to hopping conductivity mechanisms. In the higher temperature range their behaviour is described by the properties of the doped semiconductor.
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