Abstract
We present the investigations of low temperature magnetotransport in the one- or two- side Si delta-doped quantum well structures In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As grown on InP with different InAs fraction in InxGa1-xAs and hence the different quantum well depth. Hall effect and Shubnikov- de Haas oscillations were measured in quantized magnetic field up to 7 T in the temperature interval 0.3<T<4.2 K. The oscillation analysis reveals the two pronounced frequencies with the different amplitudes from two filled subbands. The electron subband mobility is shown to be sensitive to composition and doping.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
