Abstract
We present the investigations of low temperature magnetotransport in the one- or two- side Si delta-doped quantum well structures In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As grown on InP with different InAs fraction in InxGa1-xAs and hence the different quantum well depth. Hall effect and Shubnikov- de Haas oscillations were measured in quantized magnetic field up to 7 T in the temperature interval 0.3<T<4.2 K. The oscillation analysis reveals the two pronounced frequencies with the different amplitudes from two filled subbands. The electron subband mobility is shown to be sensitive to composition and doping.
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