Abstract
We present the investigations of low temperature magnetotransport in the one- or two- side Si delta-doped quantum well structures In0.52Al0.48As/InxGa1-xAs/In0.52Al0.48As grown on InP with different InAs fraction in InxGa1-xAs and hence the different quantum well depth. Hall effect and Shubnikov- de Haas oscillations were measured in quantized magnetic field up to 7 T in the temperature interval 0.3<T<4.2 K. The oscillation analysis reveals the two pronounced frequencies with the different amplitudes from two filled subbands. The electron subband mobility is shown to be sensitive to composition and doping.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
