Abstract
The high-quality La0.7Ba0.3MnO3 (LBMO) epitaxial films were deposited on (001) oriented LaAlO3 (LAO) substrates by magnetron sputtering technique. The low temperature electrical transport behavior of the films was investigated in details. In the low temperature ferromagnetic metallic state, a common feature, i.e., the minimum of electrical resistivity, was found in both of the films post annealed in oxygen and argon atmosphere. By taking the unusual combination of factors including spin dependent Kondo-like scattering, electron–electron and electron–phonon interactions into account, the resistivity minimum can be fitted well. It was found that the spin dependent Kondo-like scattering plays an important role in both the films, indicating the intrinsic spin disorder in strongly correlated manganites. Furthermore, in a lower temperature interval 4–25K, a stronger electron–electron interaction was observed in the Ar annealed films, which can be attributed to the enhanced disorder arising from oxygen vacancy.
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