Abstract
The low-temperature electrical characteristics of strained-Si metal-oxide-semiconductor field-effect transistors (MOSFETs) are investigated as a step towards determining the mechanisms responsible for the improved mobility of these devices. If the increased mobility is due to a reduction in the inter-valley (-band) phonon scattering, the increase should fall with temperature. We found that the ratios by which both the electron and hole mobility of a strained-Si MOSFET are lower than those for a conventional Si MOSFET do not significantly decrease with temperature. The result indicates that a reduction in average effective mass may make a greater contribution to the improved mobility than the reduction of phonon scattering.
Sign-in/Register to access full text options 
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
