Abstract
ABSTRACTUltra-thin silicon dioxide films can be formed at temperatures as low as 220°C by direct oxidation of Si, using active oxygen species generated by tungsten catalytic reaction in a catalytic chemical vapor deposition (Cat-CVD) system. The structural and electrical properties of such a films are investigated. It is found that the density of Si atoms in intermediate oxidation states and the density of films determined from etch rate in dilute HF solution were comparable to those of the films by a conventional thermal oxidation at 900°C. The electrical properties, breakdown electric field and leakage current were also comparable to those of thermally oxidized films.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.