Abstract
Abstract The processing temperature of chemical and physical vapor deposition could be successfully lowered by applying inductively coupled plasma without deteriorating the film quality. Despite the low process temperature, the deposition rate was higher than that observed in conventional deposition processes, and the impurity content could be kept low. Some examples of inductively coupled plasma applicationse. g. TiB2, TiN, TiO2, and SnO2 films are shown.
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