Abstract
SrRuO3 thin films were prepared on (100) LaAlO3 substrates by metalorganic chemical vapor deposition (MOCVD) at various deposition temperatures from 550°C to 750°C. The composition of the film can be controlled by monitoring the composition of the input source gas. Below 600°C, the degree of a-axis orientation of the film gradually decreased with decreasing deposition temperature. However, the resistivity of the film was almost the same for that reported for the single crystal and was independent of the deposition temperature when the Ru/(Ru+Sr) ratio of the film was 0.5. The film had almost the same value for the film thickness from 30 to 250 nm deposited at 750°C. Moreover, it increased with the Ru/(Ru+Sr) ratio below 0.45.
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