Low temperature deposition of (Mn,Sb) co-doped pzt thin film on (La,Sr)CoO3 electrode films on amorphous silica substrates for pyroelectric apllication

Abstract

(Mn,Sb) co-doped Pb(Zr, Ti)O3 (PMSZT) pyroelectric films were successfully deposited on polycrystalline La0.5Sr0.5CoO3 (LSCO) films on amorphous-glass-substrates in the low temperature range of 470°C to 550°C by pulsed laser deposition (PLD). Polycrystalline PMSZT films with preferred (110) surface normal orientation, but no in-plane order were grown on polycrystalline LSCO/silica substrates. For comparison, epitaxial PMSZT(001) films were grown under the same deposition conditions on epitaxial LSCO(001) films grown on LaAlO3 (LAO) (001) crystal substrates. Both polycrystalline and epitaxial PMSZT films on LSCO had leakage currents lower than 4×10−10 A/cm2 at 10V applied voltage. The polycrystalline PMSZT films on the LSCO/glass substrate unexpectedly showed superior ferroelectric and pyroelectric properties than the counterpart PMSZT(001) epitaxial films on LSCO(001)/LAO(001) substrates. Remnant polarization of 2Pr=62 μC/cm2 and IR photocurrent responsivity of Ri ∼2.0 mA/W at 50–60Hz were obtained for polycrystalline PMSZT films deposited on silica at 500°C, compared with 2Pr=37μC/cm2 and Ri ∼0.5 mA/W for the epitaxial PMSZT films.