Low-temperature deposition of Cd1-xZnxTe layers by laser sputtering and their physical properties

Abstract

CdZnTe films were grown by the method of modulated infrared laser deposition at a substrate temperature Tsub ≤ 1200C from appropriate sources on oriented single-crystal substrates Si, GaAs, InSb in the same technological conditions in one technological cycle. Surface morphology and spectra of low-temperature photoluminescence (T = 4.2K) in the energy range from 1.30 to 1.70 eV were studied. Luminescence spectra were analyzed and presented from three different energy regions: from 1.70 eV to 1.60 eV with exciton emission, from 1.60 eV to 1.55 eV by donor-acceptor transitions (DAP) and region A-centers from 1, 55 to 1.40 eV. The presence in the low-temperature photoluminescence spectra of free exciton bands, excitons on the neutral acceptor and neutral donor, and their phonon replicas on CdZnTe/InSb films testifies to the high structural perfection inherent in materials of detector quality with composition corresponding of the CdZnTe-target.