Abstract
We have succeeded in depositing Sr-ferrite (SrM) thin films with only several nanometer thick with apparent c-axis orientation. Pt underlayer was effective to prepare SrM films with c-axis orientation. Although perpendicular coercivity, Hc⊥, of the Ba-ferrite (BaM) and SrM films prepared by sputtering with Ar decreased in the thickness region below 40 nm, Hc⊥ of SrM films prepared by sputtering with Ar and Kr mixture gas revealed high value around 3 kOe even though the thickness of them were below 40 nm. SrM films prepared by Ar and Kr mixture gas revealed small c-axis dispersion angle, Δθ50, as small as 2°. Remanent magnetization, Mr, of SrM/Pt films was more stable than that of BaM/Pt bilayered films. Sputtering with Ar and Kr mixture gas was effective to decrease the preparation temperature of SrM films as low as 450 °C in as-deposited state.
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