Low Temperature Deposition of Bifeo3 Films on Ti Foils for Piezoelectric Applications

Abstract

Predominantly (100)-oriented BiFeO 3 films with excellent ferroelectric and piezoelectric properties were successfully fabricated on Ti foils via RF-magnetron sputtering at 450 °C. Well-saturated P-E loops with a high remnant polarization ( P r ~72 μC/cm 2 ) and a large built-in field (~145 kV/cm) were observed in the BiFeO 3 films. A large transverse piezoelectric coefficient (| e 31,f | ~ 2.2± 0.2 C/m 2 ) was demonstrated in patterned BiFeO 3 -Ti cantilevers, together with a high piezoelectric figure of merit (~2.1 GPa), a large voltage response (~0.96 GV/cm) and a remarkable fatigue-resistance (~1.1% loss of | e 31,f | after 1.2×10 6 actuation cycles). These results indicate a great potential of BiFeO 3 films as piezo-active components in metal-based micro-electro-mechanical systems (MEMS).